AC Photonics, Inc.

ACP-S7500E-96-SM CW Tunable Laser – Butterfly Package

ACP-S7500E-96-SM Tunable Laser incorporates a monolithic InP chip that integrates a tunable MG-Y laser with a semiconductor optical amplifier (SOA). The MG-Y (Modulated Grating Y-branch) laser is an electronically tuned device that can address any wavelength in the C-band. Since no mechanical or thermal adjustments are necessary, channel switching is very fast. The SOA facilitates flexible control of the output power and acts as a shutter when reverse biased, enabling dark tuning between channels.

The devices are packaged into a compact, low-profile hermetically sealed package, with an internal optical isolator and a wavelength locker. The locker monitors both output power and frequency of the light emitted from the chip, enabling a closed loop control that guarantees stability of the frequency and output power over life, to within the requirements of 50 GHz ITU grid spacing applications. The ACP-S7500E-96-SM is provided with polarization maintaining fiber for use with an external modulator. The laser is compliant per RoHS Directive 2011/65/EU.

Features
  • Full C-band Tuning (96 channels at 50 GHz spacing)
  • High, Flexible, Adjustable Output Power (from 9 to 13dBm)
  • Low Power Dissipation (typically less than 2.2W at 75°C)
  • High Side-mode Suppression Ratio (greater than 40dB)
  • Dark Tuning by Reverse Biasing the Integrated Optical Amplifier
  • Compact,Low-profile, Hermetic Laser Package with Internal Optical Isolator
  • Integral Wavelength Locker, Allowing Stabilization to within ±2.5GHz Over Life, Compatible with 50GHz ITU Grid Spacing
  • Polarization Maintaining Fiber Pigtail
Applications
  • DWDM Transmission Systems
  • Tunable DWDM Transponders and Transceivers
  • Dynamic Provisioning and Wavelength Routing in Metro DWDM Systems
  • Optical Packet or Burst-mode Switching Test and Measurement

Specifications

Parameter Unit Specifications
Symbol Test Conditions Min. Typ. Max.
Wavelength Range nm CW - 1929.16 1567.14
Frequency Range THz F - 191.3 196.05
Output Power dBm Po Isoa=100mA, Igain=100mA 10 12
Linewidth MHz LW - 1 5
Relative Intensity Noise dB/Hz RIN - -140
Side Mode Suppression Ratio dB SMSR - 40
Reference PD uA - 500 2000
Etalon PD uA - 500 2000
Polarization Extinction Ratio dB Per - 20
Front Mirror Section Voltage V Vfr - 1.4 2
Front Mirror Section Current mA Ifr - 50 70
Phase Section Voltage V Vp - 1.5 2
Phase Section Current mA Ip - 20 30
Back Mirror Section Voltage V Vbr - 1.5 2
Back Mirror Section Current mA Ibr - 60 70
SOA Section Forward Voltage V Vsoa - 3
SOA Section Forward Current mA Isoa - 150 200
Gain Section Forward Voltage V Vgain - 1.3 1.5
Gain Section Forward Current mA Igain - 100 150
Thermistor Resistance@25°C Rth - 10
Thermistor B-Constant B - 3930
COC chip Set Temperature °C Tset - 45
Channel Space GHz - 50
Fiber Length - 1000±100 mm
Fiber Type - G657 A3
ABSOLUTE MAXIMUM RATINGS
Parameter Specifications
Symbol - Min. Typ. Max.
Storage Temperature °C Ts -40 +85
Relative Humidity RH 0 85%
Laser Diode Reverse Voltage (all sections) V 3
Laser Gain Current mA Ig 160
Reflector Currents mA Irl, Irr 50
Phase Current mA Ipc 10
SOA Current mA Isoa 240
Photodiode Bias Voltage V VPD, ref, VPD, λ -5 0
Photodiode Reverse Current mA IPD, ref, IPD, λ 2
TEC Voltage V VTEC 3.5
TEC Current A ITEC 1.2