AC Photonics, Inc.

InGaAs PIN Photodiode

InGaAs PIN Photodiode

ACP’s PTD Series InGaAs Pin Photodiode are sensitive at 1310nm and 1550nm bands. The planar design and dielectric passivation bring superior noise and photoelectronic performance. Our state-of-the-art planar fabrication techniques lead to high quality and reliability.

Features
  • Wide Analog Bandwidth
  • Wide Spectral Response(1000~1650nm)
  • High Quality and Reliability
  • Low Cost
Applications
  • DWDM Power Monitoring
  • Gain and Power Monitoring in EDFA
  • OADM
  • OXC
  • High Speed Test Systems
  • Measurement Instrumentation

Specifications

Parameter Unit Specifications
Symbol Test Conditions Min. Typ. Max.
Operating Wavelength nm λ - 1000 - 1650
Dark Current nA ID VR=5V, Ee=0 0.20 0.50
Responsivity A/W Re VR=5V, λ=1310nm 0.85 0.90
Responsivity A/W Re VR=5V, λ=1550nm 0.90 0.95
Responsivity A/W Re VR=0V, λ=1310nm 0.85
Responsivity A/W Re VR=0V, λ=1550nm 0.90
Capacitance pF c f=1MHz, Case grounded VR=5V, Ee=0 0.63 0.75
Operating Voltage V Vopr - - 5 - 15
Back Reflection dB RL - - 40
Frequency Responsibility GHz BW VR=5V, 50Ω Load with lead, length=6mm, Case open 2
Package Dimension See “MECHANICAL DIMENSIONS”
ABSOLUTE MAXIMUM RATINGS(T=25°C)
Parameter Min. Typ. Max.
Reverse Voltage V - - 25
Input Optical Power dBm - - 10
Reverse Current mA - - 10
Forward Current mA - - 10
Operating Temperature °C - - - 40 +85
Storage Temperature °C - - - 40 +85
Lead Solder Temperature °C - - +260
Lead Solder Duration s - - 10
Fiber Yield Strength N - - 5

Note

1. ESD protection is imperative. It is recommended to use grounding straps, anti-static mats and other EDS protective equipment when handling or testing a photodiode device.
2. Please shorten the length of device leads as much as possible.

All parameters measured under 25°C.